TLE Results

We have explored the deposition of elemental metal films with TLE. So far we have succeeded in depositing films with thicknesses ranging from 1 to 500 nm on 2 inch Si wafers. All elemental sources could be evaporated in the same setup with growth rates between 0.01 and 1 Å/s by varying the laser power. Due to the inherent efficiency of the TLE process, significantly less power is required compared to high-temperature effusion cells and e-beam evaporators. A set of sample examples is shown below. The films are dense and homogeneous and have a very smooth surface morphology. These results show that laser evaporation is well-suited for the growth of complex compounds with excellent control.